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Ion implantation of SrS:Ce thin films

Referentgranskad
Li, Wei-Min; Ritala, M.; Leskelä, M.; Lappalainen, Reijo; Karjalainen, Milja; Soininen, Erkki; Barth...
-1997Publicationer information ikon

Ion implantation of SrS:Ce thin films

Referentgranskad
Li, Wei-Min; Ritala, M.; Leskelä, M.; Lappalainen, Reijo; Karjalainen, Milja; Soininen, Erkki; Barth...
Journal of the Society for Information Display2000Publicationer information ikon

Formation of excess donors during high-dose 74Ge+ Ion implantation

Referentgranskad
Tuomi, T.; Xia, Z.; Ristolainen, E.; Elliman, R.; Ronkainen, H.; Eranen, S.; Kuivalainen, P.; Sopane...
-1995Publicationer information ikon

Formation of excess donors during (74)Ge(+) ion implantation

Referentgranskad
Xia, Z.; Ristolainen, Eränen; Ronkainen, H.; Suni, J.; Elliman, R.; Sopanen, M.; Holloway, P.
MATERIALS RESEARCH SOCIETY1994Publicationer information ikon

Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation

Referentgranskad
DOI
10.1016/0168-583X(94)95320-1
Xia, Z.; Saarilahti, Jaakko; Ronkainen, H.; Eränen, S.; Suni, I.; Molarius, J.; Kuivalainen, P.; Ris...
NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ...1994Publicationer information ikon

Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

Xia, Z.; Ristolainen, E.; Eränen, S.; Ronkainen, H.; Elliman, R.; Sopanen, M.; Tuomi, T.
-1994Publicationer information ikon

Robustness of electrical quality of ion implanted black silicon emitters: Comparison between different ion implantation service providers

Referentgranskad
Öppen tillgång
DOI
10.4229/EUPVSEC2024/1CV.2.19
Morozova, Olga; Chen, Kexun; Radfar, Behrad; Kentsch, Ulrich; Antwis, Luke; Savin, Hele; Vähänissi, ...
Proceedings (EU PVSEC)2024Publicationer information ikon

Fluence, flux and implantation temperature dependence of ion implantation induced defect production in 4H-SiC

Referentgranskad
Slotte, Jonatan; Janson, M.S.; Saarinen, Kimmo; Kuznetsov, A.Yu.; Hallén, A.; Wong-Leung, J.; Jagadi...
Journal of Applied Physics2005Publicationer information ikon

(poster) Robustness of electrical quality of ion implanted black silicon emitters: Comparison between different ion implantation service providers

Öppen tillgång
Morozova, Olga; Chen, Kexun; Radfar, Behrad; Kentsch, Ulrich; Antwis, Luke; Savin, Hele; Vähänissi, ...
Proceedings (EU PVSEC)2024Publicationer information ikon

Analysis of retained deuterium on Be-based films: Ion implantation vs. in-situ loading

Referentgranskad
Öppen tillgång
DOI
10.1016/j.nme.2018.10.007
Mateus, Rodrigo; Porosnicu, Corneliu; Lungu, Cristian Petricǎ; Cruz, C.; Siketić, Zdravko; Radović, ...
Nuclear Materials and Energy2018

Ion implantation of SrS:Ce thin films

Referentgranskad
1997

Ion implantation of SrS:Ce thin films

Referentgranskad
2000

Formation of excess donors during high-dose 74Ge+ Ion implantation

Referentgranskad
1995

Formation of excess donors during (74)Ge(+) ion implantation

Referentgranskad
1994

Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation

Referentgranskad
DOI
10.1016/0168-583X(94)95320-1
1994

Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

1994

Robustness of electrical quality of ion implanted black silicon emitters: Comparison between different ion implantation service providers

Referentgranskad
Öppen tillgång
DOI
10.4229/EUPVSEC2024/1CV.2.19
2024

Fluence, flux and implantation temperature dependence of ion implantation induced defect production in 4H-SiC

Referentgranskad
2005

(poster) Robustness of electrical quality of ion implanted black silicon emitters: Comparison between different ion implantation service providers

Öppen tillgång
2024

Analysis of retained deuterium on Be-based films: Ion implantation vs. in-situ loading

Referentgranskad
Öppen tillgång
DOI
10.1016/j.nme.2018.10.007
2018