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Oxygen related shallow acceptor in GaN

Referentgranskad
DOI
10.1557/PROC-831-E5.10
Monemar, B.; Paskov, P.P.; Tuomisto, F.; Saarinen, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, ...
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS2005

Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes

Referentgranskad
Öppen tillgång
DOI
10.1007/978-3-030-20208-8_9
Growden, T. A.;Brown, E. R.;Berger, P. R.;Storm, D. F.;Meyer, D. J.
Springer International Publishing2020

High pressure annealing of HVPE GaN free-standing films Redistribution of defects and stress

Referentgranskad
DOI
10.1557/PROC-831-E8.18
Paskova, T.; Suski, T.; Bockowski, M.; Paskov, P. P.; Darakchieva, V.; Monemar, B.; Tuomisto, F.; Sa...
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS2005

P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si

Referentgranskad
DOI
10.1109/LED.2019.2916253
Chowdhury, Nadim; Lemettinen, Jori; Xie, Qingyun; Zhang, Yuhao; Rajput, Nitul S.; Xiang, Peng; Cheng...
IEEE Electron Device Letters2019

Patterning of sapphire / GaN substrates

Referentgranskad
DOI
10.1002/pssc.201000903
Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Tö...
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS2011

Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

Referentgranskad
Öppen tillgång
DOI
10.1063/1.4813077
Subramaniyam, Nagarajan; Svensk, Olli; Ali, Muhammad; Naresh-Kumar, Gunasekar; Trager-Cowan, Carol; ...
Applied Physics Letters2013

Vacancy-hydrogen complexes in ammonothermal GaN

Referentgranskad
DOI
10.1016/j.jcrysgro.2014.06.005
Tuomisto, F.; Kuittinen, T.; Zajac, M.; Doradzinski, R.; Wasik, D.
Journal of Crystal Growth2014

Structural, electrical and optical properties of defects in Si-doped GaN grown by molecular beam epitaxy on HVPE GaN

Referentgranskad
Laukkanen, P.; Lehkonen, S.; Uusimaa, P.; Pessa, M.; Oila, J.; Hautakangas, S.; Saarinen, K.; Likone...
Journal of Applied Physics2002

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

Referentgranskad
DOI
10.1002/pssb.200303259
Tuomisto, F.; Suski, T.; Teisseyre, H.; Krysko, M.; Leszczynski, M.; Lucznik, B.; Grzegory, I.; Poro...
Physica Status Solidi. B: Basic Research2003

Vacancy defects in bulk ammonothermal GaN crystals

Referentgranskad
DOI
10.1016/j.jcrysgro.2010.04.023
Tuomisto, Filip; Mäki, Jussi-Matti; Zajac, M.
Journal of Crystal Growth2010

Oxygen related shallow acceptor in GaN

Referentgranskad
DOI
10.1557/PROC-831-E5.10
2005

Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes

Referentgranskad
Öppen tillgång
DOI
10.1007/978-3-030-20208-8_9
2020

High pressure annealing of HVPE GaN free-standing films Redistribution of defects and stress

Referentgranskad
DOI
10.1557/PROC-831-E8.18
2005

P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si

Referentgranskad
DOI
10.1109/LED.2019.2916253
2019

Patterning of sapphire / GaN substrates

Referentgranskad
DOI
10.1002/pssc.201000903
2011

Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

Referentgranskad
Öppen tillgång
DOI
10.1063/1.4813077
2013

Vacancy-hydrogen complexes in ammonothermal GaN

Referentgranskad
DOI
10.1016/j.jcrysgro.2014.06.005
2014

Structural, electrical and optical properties of defects in Si-doped GaN grown by molecular beam epitaxy on HVPE GaN

Referentgranskad
2002

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

Referentgranskad
DOI
10.1002/pssb.200303259
2003

Vacancy defects in bulk ammonothermal GaN crystals

Referentgranskad
DOI
10.1016/j.jcrysgro.2010.04.023
2010